Laser light source

A light source apparatus comprising:

• a housing;
• a plurality of edge emitting laser diode devices disposed on a common gallium and nitrogen containing material, each of the plurality of edge emitting laser diode devices configured to emit a laser beam at a different wavelength, at least one of the plurality of edge emitting laser diode devices comprising:
• an n-cladding layer with a thickness from 100 nm to 5000 nm and a Si doping level of 1E17 to 3E18 cm-3;
• an n-side separate confinement heterostructure (SCH) layer comprised of InGaN having a molar fraction of In of between 3% and 10% and a thickness from 20 nm to 100 nm;
• multiple quantum well active region layers comprised of at least two InGaN quantum wells each having a thickness from 2 nm to 8.5 nm and separated by GaN barriers having a thickness from 2.5 nm to 8 nm;
• a p-cladding layer with a thickness from 400 nm to 1000 nm with Mg doping level of 2E17 to 2E19-3;
• and
• a p++-GaN contact layer with a thickness from 20 nm to 40 nm with Mg doping level of 1E19 to 1E21 cm-3;
• an output provided on the plurality of edge emitting laser diode devices to output a laser beam;
• and
• one or more optical members coupled to the output of the plurality of edge emitting laser diode devices, at least one of the one or more optical members comprising a phosphor material, the one or more optical members configured to output a substantially white emission.

A light apparatus, the apparatus comprising:

• a housing;
• an edge emitting laser diode device coupled to the housing, the edge emitting laser diode device comprising a gallium and nitrogen containing material, the edge emitting laser diode device comprising:
• an n-cladding layer with a thickness from 100 nm to 5000 nm and a Si doping level of 1E17 to 3E18 cm-3;
• an n-side separate confinement heterostructure (SCH) layer comprised of InGaN having a molar fraction of In of between 3% and 10% and a thickness from 20 nm to 100 nm;
• multiple quantum well active region layers comprised of at least two InGaN quantum wells each having a thickness from 2 nm to 8.5 nm and separated by GaN barriers having a thickness from 2.5 nm to 8 nm;
• a p-cladding layer with a thickness from 400 nm to 1000 nm with Mg doping level of 2E17 to 2E19 cm-3;
• and
• a p++-GaN contact layer with a thickness from 20 nm to 40 nm with Mg doping level of 1E19 to 1E21 cm-3;
• an optical component coupled to an output laser beam of the edge emitting laser diode device;
• a color wheel having phosphor material, the color wheel coupled to the edge emitting laser diode device, the phosphor material arranged to be excited by a laser beam from the edge emitting laser diode device;
• a substantially white light output from the color wheel;
• a reflector coupled to an output of the edge emitting laser diode device;
• and
• a controller coupled to the light apparatus;
• wherein the optical component comprises a waveguide coupled to the edge emitting laser diode device.