Apparatus and process for producing a crystal of semiconductor material

A process for producing a crystal of semiconductor material, comprising

• providing an apparatus comprising;
• a crucible having a crucible bottom and a crucible wall, the crucible bottom having a top surface and an underside and a multitude of openings disposed in the crucible bottom between the crucible wall and a center of the crucible bottom;
• elevations disposed on the top surface and on the underside of the crucible bottom;
• and an induction heating coil for melting semiconductor material and stabilizing a melt of semiconductor material covering a growing crystal of semiconductor material disposed below the crucible;
• generating a bed of a semiconductor material feed on the top surface of the crucible bottom;
• melting semiconductor material feed of the bed with the induction heating coil and channelling the molten semiconductor material from the top surface of the crucible bottom through the multitude of openings in the crucible bottom to the underside of the crucible bottom, the molten semiconductor material flowing underneath the elevations on the underside of the crucible bottom, to a melt which covers a growing crystal of semiconductor material and is a region of a melt zone.