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US 9,828,690 B2Granted
Component of substrate processing apparatus and method for forming a film thereon
AssigneeTokyo Electron Limited
InventorKoji Mitsuhashi
Life of this patent
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Abstract
A component of a substrate processing apparatus that performs plasma processing on a substrate includes a base mainly formed of an aluminum alloy containing silicon. A film is formed on the surface of the base by an anodic oxidation process which includes connecting the component to an anode of a power supply and immersing the component in a solution mainly formed of an organic acid. The film is impregnated with ethyl silicate.
Claims8
A method for forming a film on a component for use in a substrate processing apparatus that performs plasma processing on a substrate, the method comprising:
- providing the component having a base mainly formed of a silicon-containing aluminum alloy;
- forming on the base an alumite film having a plurality of pores by performing an anodic oxidizing process which includes immersing the base in a solution mainly formed of an organic acid;
- impregnating ethyl silicate into the pores without filling or sealing the pores,
- wherein silicon in the ethyl silicate is dispersed into the alumite film and remains therein as silicon granules, and
- wherein each of the pores has an opening passage.
2 more elements
Dependencies are inferred from the claim text.