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US 9,822,009 B2Granted
Method for producing graphene
AssigneeTokyo Electron Limited
InventorsMunehito Kagaya, Takashi Matsumoto, Daisuke Nishide
Life of this patent
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Abstract
A graphene producing method which is capable of increasing a size of each domain of graphene. A plasma CVD film formation device that activates a catalyst metal layer formed on a wafer; modifies the same into an activated catalyst metal layer; decomposes a C2H4 gas as a low reactivity carbon-containing gas by plasma in a space that opposes the wafer; and decomposes a C2H2 gas as a high reactivity carbon-containing gas by heat in the space.
Claims4
A graphene producing method, comprising:
- activating a catalytic metal layer formed on a substrate;
- supplying and decomposing a low reactivity carbon-containing gas in a space that faces the substrate;
- and
- supplying and decomposing a high reactivity carbon-containing gas different from the low reactivity carbon-containing gas, after supplying and decomposing the low reactivity carbon containing gas, in the space that faces the substrate,
- wherein the low reactivity carbon-containing gas includes at least one of an ethylene gas (a C2H4 gas), a methane gas, an ethane gas, or a propane gas, a propylene gas, a cyclic hydrocarbon gas, an aromatic hydrocarbon gas, a phenol, an alcohol, and ether, and
- wherein the high reactivity carbon-containing gas includes at least an acetylene gas (a C2H2 gas).
3 more elements
Dependencies are inferred from the claim text.