Packaged RF power transistor device having next to each other a ground and a video lead for connecting a decoupling capacitor, RF power amplifier

A packaged Radio Frequency power transistor device, in particular for use in a power amplifier operating in the frequency range from DC up to 3 GHz, the packaged Radio Frequency power transistor device comprising:

• a component carrier,
• a die comprising a semiconductor transistor having a source, a gate and a drain, wherein the die is mounted at the component carrier,
• a ground lead extending from the component carrier and electrically connected to the source,
• an output lead extending from the component carrier and electrically connected to the drain,
• a resonance circuit being electrically inserted between the drain and the ground lead,
• a video lead extending from the component carrier and electrically connected to the resonance circuit, wherein the video lead is configured for being connected to a first contact of a decoupling capacitor, wherein
• the ground lead is configured for being connected to a second contact of the decoupling capacitor, and wherein the ground lead and the video lead are spatially arranged next to each other,
• an additional ground lead being electrically connected to the ground lead, and
• an additional video lead being electrically connected to the video lead, wherein with respect to a first lateral side of the package of the Radio Frequency power transistor device at which first lateral side the ground lead and the video lead are lead through the package to the outside of the package the additional ground lead and the additional video lead are arranged at a second lateral side of the package, wherein the second lateral side is opposite to the first lateral side.