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US 9,812,508 B2Granted
Hybrid bipolar junction transistor
AssigneeInternational Business Machines Corporation
InventorsAli Afzali-Ardakani, Bahman Hekmatshoartabari, Tak H. Ning, Davood Shahrjerdi
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Abstract
Bipolar junction transistors including inorganic channels and organic emitter junctions are used in some applications for forming high resolution active matrix displays. Arrays of such bipolar junction transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes.
Claims3
A method comprising
- obtaining a bipolar junction transistor including a doped crystalline inorganic semiconductor layer and emitter, base and collector contact structures operatively associated with the crystalline inorganic semiconductor layer, the emitter contact structure configured for transporting charge carriers having a first charge type into the inorganic semiconductor layer and suppressing diffusion of charge carriers having a second charge type opposite from the first charge type from the inorganic semiconductor layer, the emitter contact structure including a first organic semiconductor carrier transport layer for transporting the charge carriers having the first type;
- causing diffusion of charge carriers having the first charge type into the inorganic semiconductor layer from the emitter contact structure;
- within the emitter contact structure, suppressing diffusion of charge carriers having the second charge type from the inorganic semiconductor layer, and
- causing the bipolar junction transistor to provide electrical current to an electronic device.
1 more element
Dependencies are inferred from the claim text.