Avalanche diode having an enhanced defect concentration level and method of making the same

A method of forming an avalanche diode, the method comprising:

• forming a first diode region next to a second diode region in a substrate, the second diode region oppositely doped from the first diode region;
• forming a defect region comprising dislocations, the defect region surrounding a junction of the first diode region and the second diode region, the defect region comprising a first major surface and an opposite second major surface;
• and
• forming a depletion zone surrounding the junction of the first diode region with the second diode region, wherein the depletion zone is wider than the defect region, wherein the depletion zone encloses the first major surface and the second major surface from both sides of the defect region comprising the dislocations.

A method of forming an avalanche diode, the method comprising:

• forming a first diode region next to a second diode region in a substrate, the second diode region oppositely doped from the first diode region;
• using an ion implantation process, introducing a neutral atomic specie into the substrate and forming an avalanche ignition region surrounding a junction of the first diode region and the second diode region, the avalanche ignition region comprising crystal defects formed from the ion implantation process, the avalanche ignition region comprising a first major surface and an opposite second major surface;
• and
• forming a depletion zone surrounding the junction of the first diode region with the second diode region, wherein the depletion zone is wider than the avalanche ignition region, wherein the depletion zone encloses the first major surface and the second major surface from both sides of the avalanche ignition region comprising the crystal defects.