FinFET device and method of forming same

A method comprising:

• patterning a substrate to form a strip, the strip comprising a first semiconductor material;
• forming an isolation region along a sidewall of the strip, an upper portion of the strip extending above a top surface of the isolation region;
• forming a dummy gate structure along sidewalls and a top surface of the upper portion of the strip;
• performing an anisotropic etching process on an exposed portion of the upper portion of the strip to form a first recess, the exposed portion of the strip being not covered by the dummy gate structure;
• performing an isotropic etching process on sidewalls and a bottom surface of the first recess to form a reshaped first recess, a bottom surface of the reshaped first recess having one or more steps;
• and
• epitaxially growing a source/drain region in the reshaped first recess, the source/drain region comprising a second semiconductor material different from the first semiconductor material.

A device comprising:

• a fin over a substrate;
• an isolation region adjacent the fin;
• a gate structure along sidewalls and over a top surface of a channel region of the fin;
• and
• an epitaxial region over the fin adjacent the gate structure, the epitaxial region having a V-shaped bottom surface, at least a portion of the V-shaped bottom surface having a stair-like pattern.