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US 9,809,891 B2Granted
Plating method
AssigneeRohm and Haas Electronic Materials LLC
InventorsMatthew A. Thorseth, Mark A. Scalisi, Luis A. Gomez, Bryan Lieb, Rebecca Lea Hazebrouck, Mark Lefebvre
Life of this patent
Estimating the term…
Abstract
Copper electroplating baths having a surface tension of ≦40 mN/m are suitable for filling vias with copper, where such copper deposits are substantially void-free and substantially free of surface defects.
Claims11
A method of filling a via in an electronic device with copper comprising:
- providing an acidic copper electroplating bath comprising a source of copper ions, an acid electrolyte, a source of halide ions, an accelerator, a leveler, and a suppressor, wherein the copper electroplating bath has a dynamic surface tension of ≦40 mN/m;
- providing as a cathode an electronic device substrate having one or more vias to be filled with copper and having a conductive surface;
- contacting the electronic device substrate with the copper electroplating bath;
- and applying a potential for a period of time sufficient to fill the vias with a copper deposit;
- wherein the copper deposit is substantially void-free and substantially free of surface defects;
- and wherein the suppressor is a branched secondary alcohol ethoxylate.
3 more elements
A copper electroplating bath composition comprising:
- a source of copper ions;
- an acid electrolyte;
- a source of halide ions;
- an accelerator;
- a leveler;
- and a suppressor;
- wherein the copper electroplating bath has a dynamic surface tension of ≦40 mN/m;
- wherein the copper electroplating bath is acidic;
- and wherein the suppressor is a branched secondary alcohol ethoxylate.
6 more elements
A copper electroplating bath composition comprising:
- a source of copper ions;
- an acid electrolyte;
- a source of halide ions;
- an accelerator;
- a leveler;
- and a suppressor;
- wherein the copper electroplating bath has a surface tension of ≦40 mN/m;
- and wherein the suppressor is a branched secondary alcohol ethoxylate.
5 more elements
Dependencies are inferred from the claim text.