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US 9,809,887 B2Granted
Method of patterning a stack
AssigneeSeagate Technology LLC
InventorsMichael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
Life of this patent
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Abstract
The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.
Claims20
A method comprising:
- patterning a resist layer disposed over an oxide layer to form a plurality features associated with a bit-patterned medium;
- etching a portion of the oxide layer that is not a layer within the formed plurality of features to expose an amorphous carbon layer disposed underneath the oxide layer;
- etching the resist layer of the formed plurality of features and the exposed amorphous carbon layer, wherein the etching the resist layer of the formed plurality of features exposes the oxide layer disposed underneath the resist layer of the formed plurality of features, and wherein the etching the exposed amorphous carbon layer exposes a magnetic layer disposed underneath the amorphous carbon layer;
- and
- etching the exposed magnetic layer to form a patterned magnetic layer.
2 more elements
A method comprising:
- patterning a resist layer disposed over an oxide layer, wherein the oxide layer is disposed over an amorphous carbon layer, and wherein the amorphous carbon layer is disposed over a magnetic layer, wherein the patterning forms a plurality features associated with a bit-patterned medium;
- etching a portion of the resist layer;
- subsequent to the etching the portion of the resist layer, etching a remainder of the resist and a portion of the oxide layer;
- and
- subsequent to etching the remainder of the resist and the portion of the oxide layer, etching a portion of the amorphous carbon layer and the magnetic layer to form the plurality of features associated with the bit-patterned medium on the magnetic layer.
2 more elements
A method comprising:
- forming an amorphous carbon layer over a magnetic layer;
- forming an oxide layer over the amorphous carbon layer;
- forming a resist layer over the oxide layer;
- patterning the resist layer to form a plurality features associated with a bit-patterned medium;
- etching a portion of the oxide layer that is not a layer within the formed plurality of features to expose the amorphous carbon layer disposed underneath the oxide layer;
- etching the resist layer of the formed plurality of features and the exposed amorphous carbon layer, wherein the etching the resist layer of the formed plurality of features exposes the oxide layer disposed underneath the resist layer of the formed plurality of features, and wherein the etching the exposed amorphous carbon layer exposes a magnetic layer disposed underneath the amorphous carbon layer;
- and
- etching the exposed magnetic layer to form a patterned magnetic layer.
5 more elements
Dependencies are inferred from the claim text.