Compound, material for forming underlayer film for lithography, underlayer film for lithography and pattern forming method

A method for forming an underlayer film for lithography, the method comprising:

• forming the underlayer film by using a material for forming the underlayer film for lithography comprising at least one of an acid generating agent and a crosslinking agent together with a compound represented by the following formula (1):
• wherein, each X independently represents an oxygen atom or a sulfur atom, R1 represents a single bond or a 2n-valent hydrocarbon group having 1 to 30 carbon atoms, the hydrocarbon group may have a cyclic hydrocarbon group, a double bond, a hetero atom or an aromatic group having 6 to 30 carbon atoms, each R2 independently represents a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or a hydroxyl group, m is an integer of 0 to 3, n is 1, p is 0 or 1, and q is an integer of 1 to 100, provided that each R2 and each m may be different, and
• wherein the compound having the structure represented by the general formula (1) comprises a compound represented by the following general formula (1c):
• wherein, R1, n, and q are the same as defined in the formula (1) and each R4 independantly represents a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or a hydroxyl group, and each m4 is independantly an integer of 0 to 2.