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US 9,809,490 B2Granted
Method for producing oxynitride film by atomic layer deposition process
AssigneePanasonic Intellectual Property Management Co., Ltd.
InventorsMiyuki Nakai, Satoshi Shibata
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Abstract
A method for producing an oxynitride film includes: (A) supplying a first precursor containing a network former into a reactor in which a substrate is placed; (B) supplying at least one of an oxygen gas and an ozone gas into the reactor; (C) supplying a second precursor containing at least one of an alkali metal element and an alkaline-earth metal element into the reactor; (D) supplying at least one of a nitrogen gas and an ammonia gas into the reactor; and (E) supplying a purge gas into the reactor.
Claims11
A method for producing an oxynitride film, comprising:
- (A) supplying a first precursor containing a network former into a reactor in which a substrate is placed;
- (B) supplying at least one selected from the group consisting of an oxygen gas and an ozone gas into the reactor;
- (C) supplying a second precursor containing at least one selected from the group consisting of an alkali metal element and an alkaline-earth metal element into the reactor;
- (D) supplying an ammonia gas into the reactor;
- and
- (E) supplying a purge gas into the reactor,
- wherein a process cycle including (A), (B), (C), and (E) is repeated a plurality of times while (D) is continuously performed.
4 more elements
Dependencies are inferred from the claim text.