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US 9,809,450 B2Granted
CMOS-MEMS integration using metal silicide formation
AssigneeInvenSense, Inc.
InventorsJong Il Shin, Peter Smeys, Jongwoo Shin
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AssigneeInvenSense, Inc.
InventorsJong Il Shin, Peter Smeys, Jongwoo Shin
Estimating the term…
A method and system for forming a MEMS device are disclosed. In a first aspect, the method comprises providing a conductive material over at least a portion of a top metal layer of a base substrate, patterning the conductive material and the at least a portion of the top metal layer, and bonding the conductive material with a device layer of a MEMS substrate via metal silicide formation. In a second aspect, the MEMS device comprises a MEMS substrate, wherein the MEMS substrate includes a handle layer, a device layer, and an insulating layer in between. The MEMS device further comprises a base substrate, wherein the base substrate includes a top metal layer and a conductive material over at least a portion of the top metal layer, wherein the conductive material is bonded with the device layer via metal silicide formation.
A method for forming a MEMS device, wherein the MEMS device includes a MEMS substrate and a base substrate, wherein the base substrate includes a top metal layer and the MEMS substrate includes a handle layer, a device layer, and an insulating layer in between, the method comprising:
A MEMS device comprising:
The MEMS device of 11, wherein the conductive material is provided only on one or more bond pads formed on the top metal layer.
The MEMS device of 11, wherein the base substrate comprises a CMOS substrate.
Dependencies are inferred from the claim text.