Imaging device and imaging system
AssigneeCanon Kabushiki Kaisha
InventorsYoichiro Handa, Hajime Ikeda
Life of this patent
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Abstract
An embodiment provides an imaging device including a pixel that includes a first photoelectric conversion portion, a second photoelectric conversion portion, a first transfer transistor, a second transfer transistor, and a floating diffusion portion. The first transfer transistor transfers a signal charge in the first photoelectric conversion portion to the floating diffusion portion. The second transfer transistor transfers a signal charge in the second photoelectric conversion portion to the floating diffusion portion. A potential at the first photoelectric conversion portion for the signal charge is higher than a potential at the second photoelectric conversion portion for the signal charge.
Claims20
An imaging device comprising:
- a pixel including
- a first photoelectric conversion portion including a first semiconductor region configured to accumulate a signal charge,
- a second photoelectric conversion portion including a second semiconductor region configured to accumulate a signal charge,
- a charge holding portion,
- a first transfer transistor configured to transfer a signal charge in the first photoelectric conversion portion to the charge holding portion, and
- a second transfer transistor configured to transfer a signal charge in the second photoelectric conversion portion to the charge holding portion;
- and
- a control unit configured to perform
- a first control operation to set the first transfer transistor to be on while keeping the second transfer transistor off from a state where both the first transfer transistor and the second transfer transistor are off, and
- after performing the first control operation, a second control operation to set a state in which both of the first transfer transistor and the second transfer transistor are on, wherein
- an impurity concentration of the first semiconductor region is lower than an impurity concentration of the second semiconductor region.
An imaging device comprising:
- a pixel including
- a first photoelectric conversion portion,
- a second photoelectric conversion portion,
- a charge holding portion,
- a first transfer transistor configured to transfer a signal charge in the first photoelectric conversion portion to the charge holding portion, and
- a second transfer transistor configured to transfer a signal charge in the second photoelectric conversion portion to the charge holding portion;
- and
- a control unit configured to perform
- a first control operation to set the first transfer transistor to be on while keeping the second transfer transistor off from a state where both the first transfer transistor and the second transfer transistor are off, and
- after performing the first control operation, a second control operation to set a state in which both of the first transfer transistor and the second transfer transistor are on, wherein
- for a signal charge, a potential of the first photoelectric conversion portion is higher than a potential of the second photoelectric conversion portion.
An imaging device comprising:
- a pixel including
- a first photoelectric conversion portion including a first semiconductor region configured to accumulate a signal charge,
- a second photoelectric conversion portion including a second semiconductor region configured to accumulate a signal charge,
- a charge holding portion,
- a first transfer transistor configured to transfer a signal charge in the first photoelectric conversion portion to the charge holding portion, and
- a second transfer transistor configured to be controlled independently from the first transfer transistor and configured to transfer a signal charge in the second photoelectric conversion portion to the charge holding portion;
- and
- a lens provided correspondingly to the pixel, wherein
- an impurity concentration of the first semiconductor region is lower than an impurity concentration of the second semiconductor region.
Dependencies are inferred from the claim text.