Flyback diode and on-board power source device
AssigneeToyota Jidosha Kabushiki Kaisha
InventorToshikazu Sugiura
Life of this patent
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Abstract
A SiC Schottky-barrier diode and a SiPiN diode are connected in parallel. Due to a difference in their thermal properties, a relatively large current flows in the SiPiN diode at a high temperature in which electro migration progresses easily in a solder layer, and the progression of the electro migration is suppressed. At a low temperature in which the electro migration does not progress so much, only a relatively small current flows in the SiPiN diode, and a loss suppression by the SiC Schottky-barrier diode is achieved.
Claims9
A flyback diode in which a current caused by electromotive force generated when a current flowing in a coil is switched on or off flows, the flyback diode comprising:
- a Schottky-barrier diode comprising a SiC substrate;
- and
- a PiN diode comprising a Si substrate and connected in parallel with the Schottky-barrier diode,
- wherein
- at least one of an anode electrode and a cathode electrode of the Schottky-barrier diode is a flat electrode provided on a surface of the SiC substrate, and
- a solder layer is bonded to the flat electrode.
A flyback diode in which a current caused by electromotive force generated when a current flowing in a coil is switched on or off flows, the flyback diode comprising:
- a Schottky-barrier diode comprising a SiC substrate;
- and
- a PiN diode comprising a Si substrate and connected in parallel with the Schottky-barrier diode,
- wherein
- at least one of an anode electrode and a cathode electrode of the Schottky-barrier diode is a flat electrode provided on a surface of the SiC substrate,
- a solder layer is bonded to the flat electrode,
- an area of the flat electrode is not larger than an area of the SiC substrate, and
- an area of the solder layer is not larger than the area of the SiC substrate.
Dependencies are inferred from the claim text.