Semiconductor laser element
AssigneeNichia Corporation
InventorTsuyoshi Hirao
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Abstract
A semiconductor laser element includes a semiconductor stack with a ridge, a first electrode layer, a current injection prevention layer, and a second electrode layer. The semiconductor stack has an emission surface and a reflection surface. The first electrode layer extends in the lengthwise direction and disposed on the ridge in contact with the semiconductor stack. The current injection prevention layer partially covers the first electrode layer, and has one or more island portions. Each of the island portions is disposed in a center region of the ridge in plan view. The second electrode layer is disposed on the current injection prevention layer, and partially in contact with the first electrode layer.
Claims9
A semiconductor laser element comprising:
- a semiconductor stack with a ridge, the semiconductor stack having an emission surface and a reflection surface;
- a first electrode layer extending in the lengthwise direction and disposed on the ridge in contact with the semiconductor stack;
- a current injection prevention layer partially covering the first electrode layer, and having one or more island portions, each of the island portions being disposed in a center region of the ridge in plan view;
- and
- a second electrode layer disposed on the current injection prevention layer, and partially in contact with the first electrode layer.
Dependencies are inferred from the claim text.