Field effect transistor array using single wall carbon nano-tubes
AssigneeThe United States of America as represented by the Secretary of the Army
InventorsShashi P. Karna, Govind Mallick
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Abstract
A field effect transistor array comprising a substrate and a plurality of single wall carbon nano-tubes disposed on a surface of the substrate. A plurality of electrodes are disposed over the nano-tubes such that the conductive strips are spaced-apart from each other. These electrodes form the contact point for the drain and source of the field effect transistor, while one or more of the nano-carbon tubes form the channel between the source and the drain.
Claims18
A field effect transistor comprising
- a substrate,
- a semiconducting channel for transistor action comprising substantially only a plurality of semiconducting carbon nano-tubes disposed on a surface of said substrate wherein said plurality of carbon nano-tubes are disposed in random directions parallel to said surface of said substrate, and
- a plurality of electrodes disposed over said plurality of semiconducting carbon nano-tubes such that said electrodes are spaced apart from each other,
- wherein said electrodes are linear, elongated and parallel to each other so that at least one of said nano-tube extends below and connects at least two of the plurality of electrodes.
A metal-oxide semiconductor field effect transistor comprising:
- a substrate,
- an electrical insulating layer disposed on said substrate,
- a semiconducting channel for transistor action comprising substantially only a plurality of semiconducting single wall carbon nano-tubes disposed in random horizontal directions on a said electrical insulating layer,
- a plurality of electrodes disposed over said plurality of semiconducting single wall carbon nano-tubes such that said electrodes are spaced apart from each other,
- wherein said plurality of single wall carbon nano-tubes randomly disposed on the surface of said substrate contain a density of from 3 to 6 bundles of disentangled, nearly-defect-free single-walled carbon nano-tubes per 100 μm2.
A method of fabricating a field effect transistor having a semiconducting channel for transistor action, the method comprising the steps of:
- forming an electrical insulating layer on a doped silicon substrate,
- growing carbon nano-tubes on said insulating layer in random directions that are parallel to a surface of said insulating layer,
- removing metallic nano-tubes while leaving substantially only semiconducting nano-tubes which had been grown on said insulating layer to form the semiconducting channel, and
- depositing a plurality of spaced apart electrodes on said semiconducting carbon nano-tubes and said insulating layer,
- wherein said electrodes are linear, elongated and parallel to each other so that at least one of said semiconducting carbon nano-tube extends below and connects at least two of the plurality of electrodes.
A method of fabricating a metal-oxide semiconductor field effect transistor having a semiconducting channel for transistor action, the method comprising the steps of:
- forming an electrical insulating layer on a heavily doped conducting silicon substrate,
- depositing a catalyst precursor polymer over the electrical insulating layer,
- growing a plurality of single-walled carbon nano-tubes on said insulating layer in random directions that are parallel to said insulating layer,
- removing metallic nano-tubes while leaving substantially only semiconducting single-walled carbon nano-tubes which had been grown on said insulating layer to form the semiconducting channel for transistor action,
- depositing a plurality of spaced apart metal electrodes on said semiconducting carbon nano-tubes and said insulating layer, said metal electrodes forming contacts for a drain and a source of said transistor,
- wherein said plurality of single wall carbon nano-tubes are randomly grown on the surface of said substrate containing a density of from 3 to 6 bundles of disentangled, nearly-defect-free single-walled carbon nano-tubes per 100 μm2.
Dependencies are inferred from the claim text.