Method of making N-type thin film transistor
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsGuan-Hong Li, Qun-Qing Li, Yuan-Hao Jin, Shou-Shan Fan
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Abstract
A method of making N-type semiconductor layer includes following steps. An insulating substrate is provided. A semiconductor carbon nanotube layer is formed on the insulating substrate. An MgO layer is deposited on the semiconductor carbon nanotube layer. A functional dielectric layer is located on the MgO layer. A source electrode and drain electrode are formed to electrically connect the semiconductor carbon nanotube layer. A gate electrode is formed on the functional dielectric layer.
Claims20
A method of making N-type thin film transistor, the method comprising:
- forming a semiconductor carbon nanotube layer on an insulating substrate;
- applying a source electrode and a drain electrode, wherein the source electrode and the drain electrode are spaced from each other and electrically connected to the semiconductor carbon nanotube layer;
- depositing a MgO layer on a surface of the semiconductor carbon nanotube layer;
- forming a functional dielectric layer to cover the MgO layer;
- and
- applying a gate electrode on the functional dielectric layer, wherein the gate electrode is insulated from the semiconductor carbon nanotube layer.
A method of making N-type thin film transistor, the method comprising:
- forming a gate electrode on an insulating substrate;
- depositing an insulating layer on the gate electrode;
- forming a semiconductor carbon nanotube layer on the insulating layer;
- applying a source electrode and a drain electrode to be electrically connected to the semiconductor carbon nanotube layer, wherein the source electrode and the drain electrode are spaced from each other;
- forming an MgO layer on the semiconductor carbon nanotube layer;
- and
- applying a functional dielectric layer on the MgO layer, wherein the functional dielectric layer dopes the semiconductor carbon nanotube layer under an affect of the MgO layer.
Dependencies are inferred from the claim text.