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US 9,806,256 B1Granted
Resistive memory device having sidewall spacer electrode and method of making thereof
AssigneeSanDisk Technologies LLC
InventorsMing-Che Wu, Chuanbin Pan, Guangle Zhou, Tanmay Kumar
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Abstract
A resistive memory device includes a first electrode, a sidewall spacer electrode located on a sidewall of a dielectric material contacting the first electrode, a resistive memory cell containing a resistive memory material and contacting the sidewall spacer electrode, and a second electrode containing the resistive memory cell.
Claims19
A resistive memory device, comprising:
- a first electrode;
- a sidewall spacer electrode located on a sidewall of a dielectric material contacting the first electrode;
- a resistive memory cell containing a resistive memory material and contacting the sidewall spacer electrode;
- and
- a second electrode containing the resistive memory cell, wherein:
- the sidewall spacer electrode comprises a polycrystalline metallic material;
- and
- a predominant portion of grain boundaries in a vertical portion of the polycrystalline metallic material are substantially horizontal.
5 more elements
A method of forming a resistive memory device, comprising:
- forming a first electrode;
- forming a dielectric pillar over the first electrode;
- forming a continuous metallic material layer over the dielectric pillar;
- removing an upper portion of the continuous metallic material layer located above the dielectric pillar to form a sidewall spacer electrode located on a sidewall of the dielectric pillar and in contact with the first electrode;
- forming a resistive memory cell containing a resistive memory material and contacting the sidewall spacer electrode;
- and
- forming a second electrode containing the resistive memory cell, wherein:
- the sidewall spacer electrode comprises a polycrystalline metallic material;
- and
- a predominant portion of grain boundaries in a vertical portion of the polycrystalline metallic material are substantially horizontal.
7 more elements
Dependencies are inferred from the claim text.