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US 9,806,255 B1Granted
Resistive random access memory and method of forming the same
AssigneeUnited Microelectronics Corp.
InventorsChia-Ching Hsu, Liang Yi, Shen-De Wang, Ko-Chi Chen
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Abstract
A resistive random access memory includes a lower electrode, an upper electrode and a resistive layer between the lower electrode and the upper electrode, wherein the resistive layer includes a constant-resistance portion and a variable-resistance portion surrounding the constant-resistance portion.
Claims20
A resistive random-access memory cell, comprising:
- a bottom electrode;
- a top electrode overlapping on the bottom electrode;
- and
- a resistance layer disposed between the top electrode and the bottom electrode, comprising:
- a constant resistance portion;
- and
- a variable resistance portion encompassing the constant resistance portion.
4 more elements
A resistive random-access memory cell, comprising:
- a bottom electrode;
- a top electrode overlapping on the bottom electrode;
- a dielectric layer having a constant resistance disposed between the top electrode and the bottom electrode;
- a first spacer having a variable resistance disposed on the bottom electrode, covering the sidewall of the top electrode and having an extending portion completely filling a recess between the top electrode, the bottom electrode and the dielectric layer;
- and
- a second spacer disposed on the bottom electrode and covering the sidewall of the first spacer.
3 more elements
A resistive random-access memory cell, comprising:
- a bottom electrode;
- a dielectric layer having a constant resistance disposed on the bottom electrode and overlapping a region of the bottom electrode;
- an L-shaped first spacer having a variable resistance covering a sidewall of the dielectric layer and the bottom electrode;
- and
- a top electrode disposed on the L-shaped first spacer and overlapping a portion of the bottom electrode wherein the top electrode and the bottom electrode are separated by the L-shaped first spacer.
2 more elements
Dependencies are inferred from the claim text.