Storage device with composite spacer and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFu-Ting Sung, Chern-Yow Hsu, Shih-Chang Liu
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Abstract
A storage device includes a first electrode, a second electrode, a storage element, a spacer and a barrier structure. The second electrode is opposite to the first electrode. The storage element is disposed between the first electrode and the second electrode. The spacer is formed on a sidewall of the second electrode, and the spacer has a notch positioned on a top surface of the spacer. The barrier structure is embedded in a lateral of the spacer, and the barrier structure has a top extending upwards past a bottom of the notch. In addition, a method of manufacturing the storage device is disclosed as well.
Claims18
A method of forming a storage device, comprising:
- forming a stacked feature comprising a storage element over a semiconductor substrate;
- forming a spacer film covering the stacked feature and the semiconductor substrate;
- forming a barrier layer covering the spacer film;
- concurrently etching the barrier layer and the spacer film by an identical etchant to expose a top surface of the stacked feature and to form a spacer positioned on a sidewall of the stacked feature and a barrier structure embedded in a lateral of the spacer, wherein the spacer comprises a notch, the notch of the spacer comprises a surface which is continuous with the top surface of the stacked feature, and the barrier layer has an etching resistance to the etchant that is greater than an etching resistance to the etchant of the spacer film, wherein the barrier structure has a thickness that is approximately 5-35% of a thickness of the spacer;
- and
- forming a dielectric layer covering the stacked feature, the spacer and the barrier structure.
A method of forming a storage device, comprising:
- forming a first electrode over a substrate;
- forming a stacked feature over the substrate, the stacked feature comprising a storage element and a second electrode over the storage element;
- forming a spacer film conformally covering the stacked feature;
- forming a barrier layer conformally covering the spacer film;
- concurrently etching the barrier layer and the spacer film by an identical etchant to expose a top surface of the stacked feature and to form a spacer positioned on a sidewall of the stacked feature and a barrier structure embedded in a lateral of the spacer, wherein the spacer comprises a notch, the notch of the spacer comprises a surface which is continuous with the top surface of the stacked feature, and the barrier layer has an etching resistance to the etchant that is greater than an etching resistance to the etchant of the spacer film, wherein an etching rate of the etching of the spacer film is at least 8 folds of an etching rate of the etching of the barrier layer;
- and
- forming a dielectric layer covering the stacked feature, the spacer and the barrier structure.
Dependencies are inferred from the claim text.