Method for providing a high perpendicular magnetic anisotropy layer in a magnetic junction usable in spin transfer torque magnetic devices using multiple anneals

A method for providing a magnetic junction on a substrate usable in a magnetic device, the method comprising:

• providing a free layer, the free layer being switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction;
• providing a crystalline MgO tunneling barrier layer;
• providing a pinned layer, the crystalline MgO tunneling barrier layer residing between the pinned layer and the free layer;
• and
• wherein at least one of the step of providing the free layer and the step of providing the pinned layer includes
• depositing an amorphous magnetic layer, the amorphous magnetic layer being selected from a CoFeB layer and a FeB layer, the amorphous magnetic layer including a glass-promoting component and being amorphous as-deposited, the glass promoting component being B;
• depositing a sacrificial layer on the amorphous magnetic layer, the sacrificial layer being selected from a Ta layer and a W layer;
• performing a first rapid thermal anneal (RTA) of the magnetic layer and the sacrificial layer at a first temperature greater than 300 degrees Celsius and not more than 475 degrees Celsius, the magnetic layer being at least partially crystallized after the first anneal;
• performing a second RTA of the magnetic layer and the sacrificial layer after the first RTA, the second RTA being at a second temperature greater than the first temperature, the second temperature being greater than 400 degrees Celsius and not more than 575 degrees Celsius;
• and
• performing a plasma treatment to remove the sacrificial layer.