Light emitting device

A light emitting device, comprising:

• a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
• a first current blocking layer disposed on the light emitting structure;
• a second current blocking layer disposed on the light emitting structure and electrically separated from the first current blocking layer;
• a light-transmitting conductive layer disposed on the first current blocking layer, the second current blocking layer, and the light emitting structure;
• a first electrode electrically connected to the first conductive semiconductor layer and overlapped with the first current blocking layer in a vertical direction;
• a second electrode electrically connected to the second conductive semiconductor layer and overlapped with the second current blocking layer in the vertical direction;
• a through electrode electrically connected to the first electrode and disposed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer;
• and
• an insulation layer disposed between the first electrode and the first current blocking layer and between the second electrode and the second current blocking layer,
• wherein a portion of the insulation layer is opened to form an open region, and the light-transmitting conductive layer is exposed through the open region, and
• wherein the insulation layer has a constant thickness on light-transmitting conductive layer except for at the open region, and a height of the insulation layer is greater at regions corresponding to at least one of the first current blocking layer or the second current blocking layer than the other regions.

A light emitting device, comprising:

• a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
• a first current blocking layer disposed on the light emitting structure;
• a second current blocking layer disposed on the light emitting structure and electrically separated from the first current blocking layer;
• a light-transmitting conductive layer disposed on the first current blocking layer, the second current blocking layer, and the light emitting structure;
• a first electrode electrically connected to the first conductive semiconductor layer;
• a second electrode electrically connected to the second conductive semiconductor layer;
• a through electrode electrically connected to the first electrode and disposed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer;
• and
• an insulation layer disposed between the first electrode and the first current blocking layer and between the second electrode and the second current blocking layer,
• wherein at least one of the first current blocking layer and the second current blocking layer is a distributed Bragg reflector (DBR) or an omni-directional reflector (ODR).