Nitride semiconductor element and method for manufacturing the same
AssigneeNichia Corporation
InventorsTomohiro Shimooka, Masahiko Sano, Naoki Azuma
Life of this patent
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Abstract
A nitride semiconductor element includes a sapphire substrate including: a main surface extending in a c-plane of the sapphire substrate, and a plurality of projections disposed at the main surface, the plurality of projections including at least one projection having an elongated shape in a plan view; and a nitride semiconductor layer disposed on the main surface of the sapphire substrate. The at least one projection has an outer edge extending in a longitudinal direction of the elongated shape, the outer edge extending in a direction oriented at an angle in a range of −10° to +10° with respect to an a-plane of the sapphire substrate in the plan view.
Claims15
A nitride semiconductor element comprising:
- a sapphire substrate comprising:
- a main surface extending in a c-plane of the sapphire substrate, and
- a plurality of projections that are made of sapphire and disposed at the main surface, each of the plurality of projections having an elongated shape in a plan view;
- and
- a nitride semiconductor layer disposed on the main surface of the sapphire substrate,
- wherein each projection has an outer edge extending in a longitudinal direction of the elongated shape, the outer edge extending in a direction oriented at an angle in a range of −10° to +10° with respect to an a-plane of the sapphire substrate in the plan view.
A nitride semiconductor element, comprising:
- a sapphire substrate comprising:
- a main surface extending in a c-plane of the sapphire substrate, and
- a plurality of projections disposed at the main surface, each of the plurality of projections having an elongated shape in a plan view;
- and
- a nitride semiconductor layer disposed on the main surface of the sapphire substrate,
- wherein the sapphire substrate includes:
- a first group including first projections, each of the first projections having an outer edge in a longitudinal direction of the elongated shape of the projections extending in a direction oriented at an angle in a range of −10° to +10° with respect to the a-plane whose normal line is a first a-axis of the sapphire substrate;
- a second group including second projections, each of the second projections having an outer edge in the longitudinal direction of the elongated shape of the projections extending in a direction oriented at an angle in a range of −10° to +10° with respect to the a-plane whose normal line is a second a-axis that is different from the first a-axis of the sapphire substrate;
- and
- a third group including third projections, each of the third projections having an outer edge in the longitudinal direction of the elongated shape of the projections extending in a direction oriented at an angle in a range of −10° to +10° with respect to the a-plane whose normal line is a third a-axis that is different from the first a-axis and the second a-axis of the sapphire substrate.
Dependencies are inferred from the claim text.