Semiconductor light-emitting device having a photonic crystal pattern formed thereon, and method for manufacturing same

A method for manufacturing a semiconductor light-emitting device, comprising:

• (a) sequentially forming, on a semiconductor substrate, a first semiconductor layer, an activation layer and a second semiconductor layer;
• (b) forming, on the surface of the second semiconductor layer, a first photonic crystal pattern so as to have a concavo-convex section, and forming a second photonic crystal pattern in the first photonic crystal pattern;
• and
• (c) forming a transparent electrode layer on the second semiconductor layer,
• wherein the step (b) comprises:
• (b1) forming a plurality of concave portions on the surface of the second semiconductor layer, thereby forming the first photonic crystal pattern;
• and
• (b2) forming the second photonic crystal pattern having a concavo-convex section on an upper surface of the second semiconductor layer between the concaved portions, and on a lower surface of the concaved portions, respectively, and
• wherein in the step (b2), polymer beads are arranged in a single layer on the upper surface of the semiconductor layer where the first photonic crystal pattern has been formed, and on the lower surface of the concaved portions, then a size of the polymer beads is controlled, and then the second semiconductor layer is etched using the polymer beads as an etching mask, thereby forming the second photonic crystal pattern.