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US 9,806,221 B2Granted
Germanium photodetector with SOI doping source
AssigneeGlobalfoundries Inc.
InventorsSteven M. Shank, John J. Ellis-Monaghan, Marwan H. Khater, Jason S. Orcutt
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Abstract
Various particular embodiments include a method for forming a photodetector, including: forming a structure including a barrier layer disposed between a layer of doped silicon (Si) and a layer of germanium (Ge), the barrier layer including a crystallization window; and annealing the structure to convert, via the crystallization window, the Ge to a first composition of silicon germanium (SiGe) and the doped Si to a second composition of SiGe.
Claims10
A method for forming a photodetector, comprising:
- forming a structure including a barrier layer disposed between a layer of doped silicon (Si) and a layer of germanium (Ge), the barrier layer including a crystallization window;
- annealing the structure to convert, via the crystallization window, the layer of Ge to a first composition of graded silicon germanium (SiGe) and the doped Si to a second composition of graded SiGe;
- and
- doping the first composition of graded SiGe with a p-type dopant forming p-type regions and heavily doping with an n-type dopant forming n-type regions in an alternating sequence.
1 more element
Dependencies are inferred from the claim text.