Photodetector using bandgap-engineered 2D materials and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJinseong Heo, Seongjun Park, Kiyoung Lee, Sangyeob Lee, Eunkyu Lee, Jaeho Lee
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Abstract
A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.
Claims19
A photodetector comprising:
- an insulating layer on a substrate;
- a first graphene layer on the insulating layer;
- a 2-dimensional (2D) material layer on the first graphene layer, the 2D material layer including a light absorption layer and a barrier layer having a larger bandgap than the light absorption layer;
- a second graphene layer on the 2D material layer;
- a first electrode on the first graphene layer;
- and
- a second electrode on the second graphene layer.
A photodetector comprising:
- a first electrode on a substrate;
- a 2-dimensional (2D) material layer on the first electrode, the 2D material layer including a light absorption layer and a barrier layer having a larger bandgap than the light absorption layer;
- a first graphene layer on the 2D material layer;
- and
- a second electrode on a portion of the first graphene layer.
A method of manufacturing a photodetector, the method comprising:
- forming an insulating layer on a substrate;
- forming a first graphene layer on the insulating layer;
- forming a 2-dimensional (2D) material layer on the first graphene layer, the 2D material layer including a light absorption layer and a barrier layer having a larger bandgap than the light absorption layer;
- forming a second graphene layer on the 2D material layer;
- forming a first electrode on the first graphene layer;
- and
- forming a second electrode on the second graphene layer.
A method of manufacturing a photodetector, the method comprising:
- forming a first electrode on a substrate;
- forming a 2-dimensional (2D) material layer on the first electrode, the 2D material layer including a light absorption layer and a barrier layer having a larger bandgap than the light absorption layer;
- forming a first graphene layer on the 2D material layer;
- and
- forming a second electrode on a portion of the first graphene layer.
Dependencies are inferred from the claim text.