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US 9,806,217 B2Granted
Fully integrated CMOS-compatible photodetector with color selectivity and intrinsic gain
AssigneeWilliam Marsh Rice University
InventorsBob Yi Zheng, Yumin Wang, Nancy J. Halas, Peter Nordlander
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Abstract
A metal-semiconductor-metal photodetecting device and method of manufacturing a metal-semiconductor-metal photodetecting device that includes a p-type silicon substrate with an oxide layer disposed on the p-type silicon substrate. Schotty junctions are disposed adjacent to the oxide layer on the p-type silicon substrate and a plasmonic grating disposed on the oxide layer. The plasmonic grating provides wavelength range selectability for the photodetecting device.
Claims11
A metal-semiconductor-metal photodetecting device, comprising:
- a p-type silicon substrate;
- an oxide layer disposed on the p-type silicon substrate;
- Schottky junctions disposed adjacent to the oxide layer on the p-type silicon substrate;
- and
- a plasmonic grating disposed on the oxide layer,
- wherein the plasmonic grating provides wavelength range selectability for the photodetecting device,
- wherein the plasmonic grating comprises:
- a film, and
- a plurality of perforations through the film.
6 more elements
Dependencies are inferred from the claim text.