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US 9,806,212 B2Granted
Ultrathin group II-VI semiconductor layers, group II-VI semiconductor superlattice structures, photovoltaic devices incorporating the same, and related methods
AssigneeUniversity of Kansas
InventorsJudy Z. Wu, Bing Li, Liang-huan Feng
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Abstract
Disclosed are ultrathin layers of group II-VI semiconductors, group II-VI semiconductor superlattice structures, photovoltaic devices incorporating the layers and superlattice structures and related methods. The superlattice structures comprise an ultrathin layer of a first group II-VI semiconductor alternating with an ultrathin layer of at least one additional semiconductor, e.g., a second group II-VI semiconductor, or a group IV semiconductor, or a group III-V semiconductor.
Claims19
A photovoltaic device comprising:
- a substrate,
- a back contact layer disposed over the substrate,
- a first group II-VI superlattice structure between the substrate and the back contact layer, the first group II-VI superlattice structure comprising alternating ultrathin layers of a first group II-VI semiconductor and at least one additional semiconductor selected from the group consisting of a second group II-VI semiconductor, a group IV semiconductor, and a group III-V semiconductor, and
- a layer of semiconductor between the substrate and the back contact layer, the layer of semiconductor comprising a different majority charge carrier than the first group II-VI superlattice structure,
- wherein the first group II-VI superlattice structure is a single offset superlattice characterized by one of a substantially zero conduction band offset of 0.15 eV or less and a substantially zero valence band offset of 0.15 eV or less,
- and further wherein the layer of semiconductor is a second group II-VI superlattice structure, wherein the first group II-VI superlattice structure is characterized by the substantially zero conduction band offset and the second group II-VI superlattice structure is another single offset superlattice characterized by a substantially zero valence band offset of 0.15 eV or less.
3 more elements
A photovoltaic device comprising:
- a substrate,
- a back contact layer disposed over the substrate,
- a first group II-VI superlattice structure between the substrate and the back contact layer, the first group II-VI superlattice structure is composed of alternating ultrathin layers of CdS and ZnS, and
- a second group II-VI superlattice structure between the substrate and the back contact layer, the second group II-VI superlattice structure comprising a different majority charge carrier than the first group II-VI superlattice structure,
- wherein the first group II-VI superlattice structure is a single offset superlattice characterized by a substantially zero conduction band offset of 0.2 eV or less and the second group II-VI superlattice structure is another single offset superlattice characterized by a substantially zero valence band offset of 0.2 eV or less.
2 more elements
Dependencies are inferred from the claim text.