Photoelectric conversion element
AssigneeSharp Kabushiki Kaisha
InventorKenji Kimoto
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Abstract
A photoelectric conversion element includes a semiconductor, an intrinsic layer disposed on the semiconductor and containing hydrogenated amorphous silicon, a first-conductivity-type layer that covers a part of the intrinsic layer and contains hydrogenated amorphous silicon of a first conductivity type, a second-conductivity-type layer that covers a part of the intrinsic layer and contains hydrogenated amorphous silicon of a second conductivity type, an insulating film covering an end region of the first-conductivity-type layer, a first electrode disposed on the first-conductivity-type layer, and a second electrode disposed on the second-conductivity-type layer. An end portion of the second-conductivity-type layer is located on the insulating film or above the insulating film.
Claims12
A photoelectric conversion element comprising:
- a semiconductor;
- an intrinsic layer extending continuously along a back surface of the semiconductor and containing hydrogenated amorphous silicon;
- a first-conductivity-type layer that directly covers a portion of the intrinsic layer and contains hydrogenated amorphous silicon of a first conductivity type;
- a second-conductivity-type layer that directly covers a portion of the intrinsic layer and contains hydrogenated amorphous silicon of a second conductivity type;
- an insulating film directly covering an end region of the first-conductivity-type layer and not contacting the intrinsic layer;
- a first electrode on the first-conductivity-type layer;
- and
- a second electrode on the second-conductivity-type layer, wherein
- an end portion of the second-conductivity-type layer is on the insulating film or above the insulating film, and
- a surface of the intrinsic layer which is opposite to a surface of the intrinsic layer in contact with the first-conductivity-type layer and a surface of the intrinsic layer which is opposite to a surface of the intrinsic layer in contact with the second-conductivity-type layer are in a same plane as the semiconductor.
Dependencies are inferred from the claim text.