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US 9,806,205 B2Granted
N-type aluminum nitride monocrystalline substrate
AssigneeTokuyama Corporation
InventorsToru Kinoshita, Toru Nagashima
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Abstract
A silicon-doped n-type aluminum nitride monocrystalline substrate wherein, at a photoluminescence measurement at 23° C., a ratio (I1/I2) between the emission spectrum intensity (I1) having a peak within 370 to 390 nm and the emission peak intensity (I2) of the band edge of aluminum nitride is 0.5 or less; a thickness is from 25 to 500 μm; and a ratio (electron concentration/silicon concentration) between the electron concentration and the silicon concentration at 23° C. is from 0.0005 to 0.001.
Claims7
A n-type aluminum nitride single crystal substrate doped with silicon, comprising:
- an impurity concentration other than silicon which functions as a donor impurity and is equal or less than a silicon concentration,
- wherein:
- a ratio (I1/I2) between a luminescence spectrum intensity (I1) of a peak at 370 to 390 nm and a luminescence peak intensity (I2) of a band edge of aluminum nitride is 0.5 or less by a photoluminescence measurement at 23° C.,
- a thickness is 25 to 500 μm, and
- a ratio between an electron concentration and a silicon concentration at 23° C. is 0.0005 to 0.001.
2 more elements
Dependencies are inferred from the claim text.