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US 9,806,199 B2Granted
Thin film transistor, array substrate and display device having the same, and method of manufacturing thereof
AssigneeBoe Technology Group Co., Ltd.
InventorLiangchen Yan
Life of this patent
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Abstract
The disclosure provides a method of manufacturing a thin film transistor on a base substrate by patterning an active layer comprising a metal oxynitride, and treating the active layer with a plasma comprising oxygen.
Claims14
A method of manufacturing a bottom gate type thin film transistor on a base substrate, comprising:
- forming an active layer comprising a metal oxynitride;
- forming an etching stop layer on top of the active layer pattern;
- and
- subsequent to forming the etching stop layer, treating the active layer with a plasma comprising oxygen.
1 more element
A method of manufacturing a top gate type thin film transistor on a base substrate, comprising forming an active layer comprising a metal oxynitride;
- treating the active layer with a plasma comprising oxygen;
- and subsequent to treating the active layer with a plasma comprising oxygen, annealing a substrate comprising the active layer.
Dependencies are inferred from the claim text.