Semiconductor device with fin and related methods
AssigneeSTMicroelectronics S.r.l.
InventorsPierre Morin, Nicolas Loubet
Life of this patent
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Abstract
A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, and source and drain regions adjacent the channel region to generate shear and normal strain on the channel region. A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, source and drain regions adjacent the channel region, and a gate over the channel region. The fin may be canted with respect to the source and drain regions to generate shear and normal strain on the channel region.
Claims24
A device, comprising:
- a substrate;
- a plurality of fins on the substrate;
- source and drain regions adjacent to the plurality of fins, the source and drain regions have an extension, the plurality of fins are canted with respect to the source and drain regions and the extension of the source and drain regions;
- a channel region in each of the fins, the channel regions being between the source and drain region;
- and
- a gate structure over the channel regions, the gate structure has an extension that is substantially parallel to the extension of the source and drain regions.
A device, comprising:
- a substrate;
- a plurality of gate structures on the substrate, each gate structure having a length that extends along a first axis;
- a plurality of fins extending from a surface of the substrate and aligned with each other along a second axis, each fin overlapped by a respective one of the plurality of gate structures, the first axis at an oblique angle to the second axis;
- and
- source and drain regions adjacent to the plurality of fins and between ones of the plurality of gate structures, the source and drain regions are aligned along the first axis.
A device, comprising:
- a substrate;
- a plurality of fins aligned along a first axis;
- a gate structure aligned along a second axis that is oblique to the first axis, the gate structure positioned above the plurality of fins;
- and
- source and drain regions adjacent to the gate structure, the source and drain regions are aligned along the second axis.
A device, comprising:
- a substrate;
- a plurality of fins on the substrate;
- source and drain regions adjacent to the plurality of fins, the plurality of fins are canted with respect to the source and drain regions;
- a channel region in each of the fins, the channel regions being between the source and drain region, the channel region includes shear and normal strain in response to the plurality of fins being canted with respect to the source and drain regions;
- and
- a gate structure over the channel regions.
A device, comprising:
- a substrate;
- a plurality of fins aligned along a first axis;
- a gate structure aligned along a second axis that is oblique to the first axis, the gate structure positioned above the plurality of fins, the gate structure has an extension that is aligned along the second axis;
- and
- source and drain regions adjacent to the gate structure, the source and drain regions have an extension that is substantially parallel to the extension of the gate structure.
A device, comprising:
- a substrate;
- a plurality of fins on the substrate;
- source and drain regions adjacent to the plurality of fins, the plurality of fins are canted with respect to the source and drain regions;
- a channel region in each of the fins, the channel regions being between the source and drain region;
- and
- a gate structure over the channel regions, the gate structure aligned substantially parallel to the source and drain regions.
Dependencies are inferred from the claim text.