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US 9,806,194 B2Granted
FinFET with fin having different Ge doped region
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Dae Suk, Kang-Ill Seo
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Abstract
A semiconductor device is provided. A fin is disposed on a substrate. The fin, including a first material and a second material, includes a first fin area and a second fin area. A gate structure is disposed on the first fin area. A source region is in contact with the second fin area. The first fin area includes the first material at a first concentration, the second fin area includes the first material at a second concentration which is greater than the first concentration.
Claims19
A semiconductor device comprising:
- a substrate;
- a fin including a first material and a second material disposed on the substrate,
- wherein the first material includes Ge and the second material includes Si,
- wherein the fin is extended in a first direction substantially parallel to an upper surface of the substrate and protruded from the substrate in parallel to a second direction substantially perpendicular to the upper surface of the substrate, and
- wherein the fin includes a first fin area and a second fin area;
- a gate structure disposed on the first fin area and extended in a third direction substantially perpendicular to the first and second directions;
- and
- a source region being in contact with the second fin area,
- wherein the first fin area includes the first material at a first concentration,
- wherein the second fin area includes the first material at a second concentration which is greater than the first concentration,
- wherein the second concentration of the first material of the second fin area gradually decreases from a boundary between the source region and the second fin area toward the first fin area in parallel to the first direction.
8 more elements
A semiconductor device comprising:
- a fin structure disposed on a substrate,
- wherein the fin structure, extending in a first direction substantially parallel to an upper surface of the substrate and protruded from the substrate in parallel to a second direction substantially perpendicular to the upper surface of the substrate, includes a channel region including Ge;
- a gate structure disposed on the channel region, extending in a third direction substantially perpendicular to the first and second directions;
- a source region being in contact with the channel region and including Ge;
- and
- a gate spacer disposed on a sidewall of the gate structure and the source region,
- wherein the channel region includes a first fin area and a second fin area,
- wherein the first fin area and the second fin area are positioned under the gate structure and the gate spacer, respectively,
- wherein the second fin area is in contact with the source region, extending in the third direction, and
- wherein a concentration of Ge gradually decreases in the order of:
- the source region, the second fin area and the first fin area in parallel to the first direction.
8 more elements
Dependencies are inferred from the claim text.