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US 9,806,191 B1Granted
Vertical channel oxide semiconductor field effect transistor and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsWanxun He, Su Xing
Life of this patent
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Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a source layer; removing part of the source layer to form a first opening; forming a first channel layer in the first opening; forming a gate layer around the first channel layer and on the source layer; forming a drain layer on the gate layer and the first channel layer; removing part of the drain layer to form a second opening; and forming a second channel layer in the second opening.
Claims8
A method for fabricating semiconductor device, comprising:
- providing a source layer;
- removing part of the source layer to form a first opening;
- forming a first channel layer in the first opening;
- forming a gate layer around the first channel layer and on the source layer;
- forming a drain layer on the gate layer and the first channel layer;
- removing part of the drain layer to form a second opening;
- and
- forming a second channel layer in the second opening.
5 more elements
Dependencies are inferred from the claim text.