Semiconductor device

A semiconductor device comprising:

• a semiconductor layer of a first conductivity type;
• a body region of a second conductivity type formed in a surface portion of the semiconductor layer;
• a source region of a first conductivity type formed in a surface portion of the body region apart from a peripheral edge of the body region;
• a drain region of a first conductivity type formed in the surface portion of the semiconductor layer apart from the body region;
• a gate electrode opposed to the body region across a gate insulating film between the source region and the drain region;
• an insulating layer formed on the semiconductor layer;
• a resin formed on the insulating layer;
• a source electrode formed in the insulating layer so as to be electrically connected to the source region;
• a drain electrode formed in the insulating layer so as to be electrically connected to the drain region;
• and
• a conductive shielding member formed in the insulating layer so as to, in a plan view as viewed from a normal direction to a surface of the semiconductor layer, overlap the gate electrode at least in part and collectively cover a region between the drain region and the gate electrode, the conductive shielding member including a first conductive film that is electrically connected to the drain electrode and insulated from the source electrode.

A semiconductor device, comprising:

• a semiconductor layer of a first conductivity type;
• a source region and a drain region of a first conductivity type formed in a surface portion of the semiconductor layer apart from each other;
• a body region of a second conductivity type formed in the surface portion of the semiconductor layer so as to enclose the source region, and having a channel forming portion that forms a channel between the semiconductor layer and the source region and a breakdown voltage holding portion in which the source region does not exist;
• a gate electrode opposed to the body region across a gate insulating film between the source region and the drain region;
• an insulating layer formed on the semiconductor layer;
• a resin formed on the insulating layer;
• and
• a conductive shielding member formed in the insulating layer so as to, in a plan view as viewed from a normal direction to a surface of the semiconductor layer, cover at least a region between the drain region and the breakdown voltage holding portion of the body region, the conductive shielding member including a first conductive film that is electrically connected to the drain region and insulated from the source region.