Method for producing a controllable semiconductor component having trenches with different widths and depths

A method for producing a controllable semiconductor component, the method comprising:

• providing a semiconductor body with a top side and a bottom side;
• forming a first trench protruding from the top side into the semiconductor body and a second trench protruding from the top side into the semiconductor body, the first trench comprising a first width and a first depth, and the second trench comprising a second width greater than the first width and a second depth greater than the first depth;
• forming, in a common process, an oxide layer in the first trench and in the second trench such that the oxide layer fills the first trench and electrically insulates a surface of the second trench;
• removing the oxide layer from the first trench completely or at least partly such that the semiconductor body comprises an exposed first surface area arranged in the first trench;
• filling an electrically conductive material into the second trench;
• and
• partially removing the semiconductor body and the oxide layer such that the electrically conductive material comprises an exposed second surface area at the bottom side.