Non-volatile memory device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorDong Kee Lee
Life of this patent
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Abstract
A non-volatile memory device and a method of manufacturing the same are provided. The device includes a substrate including a cell region and a peripheral region, a gate pattern formed over the substrate in the peripheral region, a multilayered structure formed over the gate pattern in the peripheral region, the multilayered structure including interlayer insulating layers and material layers for sacrificial layers, and a capping layer formed between the gate pattern and the multilayered structure in the peripheral region to cover the substrate, the capping layer configured to prevent diffusion of impurities from the material layers for the sacrificial layers into the substrate in the peripheral region.
Claims9
A non-volatile memory device comprising:
- a substrate including a cell region and a peripheral region;
- a gate pattern formed over the substrate in the peripheral region;
- a multilayered structure formed over the gate pattern in the peripheral region, the multilayered structure including interlayer insulating layers and sacrificial layers;
- and
- a capping layer formed between the gate pattern and the multilayered structure in the peripheral region to cover the substrate,
- wherein the sacrificial layers and the capping layer include impurities and are configured to be selectively etched with respect to the interlayer insulating layers by using a same etchant, and the capping layer has a lower concentration of impurities than the sacrificial layers,
- wherein the impurities include hydrogen (H) ions and positive charges.
Dependencies are inferred from the claim text.