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US 9,806,184 B2Granted
Semiconductor device with low-conducting field-controlling element
AssigneeSensor Electronic Technology, Inc.
InventorsGrigory Simin, Michael Shur, Remigijus Gaska
Life of this patent
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Abstract
A semiconductor device including a low conducting field-controlling element is provided. The device can include a semiconductor including an active region (e.g., a channel), and a set of contacts to the active region. The field-controlling element can be coupled to one or more of the contacts in the set of contacts. The field-controlling element can be formed of a low conducting layer of material and have a lateral resistance that is both larger than an inverse of a minimal operating frequency of the device and smaller than an inverse of a maximum control frequency of the device.
Claims20
A device comprising:
- a semiconductor including an active region;
- source, drain and gate contacts to the active region;
- a barrier layer extending between the source and drain contacts, wherein the gate contact is located on the barrier layer;
- an isolation layer at least partially encapsulating the gate;
- and
- a first field-controlling element directly contacting the gate,
- wherein a sheet resistance of the first field-controlling element is such that a time constant for the field-controlling element is larger than an inverse of a minimal operating frequency of the device and the time constant for the first field-controlling element is smaller than an inverse of a maximum control frequency of the device, and
- wherein the first field-controlling element includes different electrical properties at different operating frequencies, the first field-controlling element behaving similar to a metal conductor during low frequency operation, and behaving similar to an insulator during high frequency operation.
5 more elements
A field-effect transistor comprising:
- a source contact, a drain contact, and a device channel there between;
- a barrier layer extending between the source contact and the drain contact;
- a gate located on the barrier layer on a first side of the device channel;
- an isolation layer directly contacting the gate and the drain contact;
- and
- a first field-controlling element directly contacting a top surface of the gate and extending from the gate toward the drain contact,
- wherein a sheet resistance of the first field-controlling element is such that a time constant for the field-controlling element is larger than an inverse of a minimal operating frequency of the field-effect transistor and the time constant for the first field-controlling element is smaller than an inverse of a maximum control frequency of the field-effect transistor, and
- wherein the first field-controlling element includes different electrical properties at different operating frequencies, the first field-controlling element behaving similar to a metal conductor during low frequency operation, and behaving similar to an insulator during high frequency operation.
5 more elements
A field-effect transistor comprising:
- a source contact, a drain contact, and a device channel there between;
- a barrier layer extending between the source contact and the drain contact;
- a gate located on the barrier layer on a first side of the device channel;
- a set of isolation layers directly contacting the gate, the source contact, and the drain contact, wherein the set of isolation layers covers all of a source-gate spacing and a gate-drain spacing;
- and
- a first field-controlling element directly contacting a top surface of the gate and extending beyond an edge of the gate over a portion of one of the set of isolation layers,
- wherein a sheet resistance of the first field-controlling element is such that a time constant for the field-controlling element is larger than an inverse of a minimal operating frequency of the field-effect transistor and the time constant for the first field-controlling element is smaller than an inverse of a maximum control frequency of the field-effect transistor, and
- wherein the first field-controlling element includes different electrical properties at different operating frequencies, the first field-controlling element behaving similar to a metal conductor during low frequency operation, and behaving similar to an insulator during high frequency operation.
5 more elements
Dependencies are inferred from the claim text.