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US 9,806,183 B2Granted
Stress control on thin silicon substrates
AssigneeVeeco Instruments Inc.
InventorsJie Su, George Papasouliotis
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Abstract
Methods for stress control in thin silicon (Si) wafer-based semiconductor materials. By a specific interrelation of process parameters (e.g., temperature, reactant supply, time), a highly uniform nucleation layer is formed on the Si substrate that mitigates and/or better controls the stress (tensile and compressive) in subsequent layers formed on the thin Si substrate.
Claims12
A method of forming a highly uniform nucleation layer of a semiconductor device on a substrate having a thickness no greater than 1 mm, the method comprising:
- providing a flow of an aluminum (Al)-containing reactive species to a plateau during a preflow period at a temperature of 550-750° C.;
- after the preflow period, providing a flow of nitrogen (N)-containing reactive species to a plateau while maintaining the Al-containing reactive species flow plateau during the N-containing reactive species flow plateau, where during the preflow period there is no N-containing reactive species flow;
- and
- after reaching the Al-containing reactive species flow plateau and the N-containing reactive species flow plateau, maintaining the Al-containing reactive species flow plateau and the N-containing reactive species flow plateau and holding at a temperature of above 1000° C.
1 more element
Dependencies are inferred from the claim text.