Semiconductor devices having a gate stack
AssigneeInstitute of Microelectronics, Chinese Acadamy of Sciences
InventorsHuilong Zhu, Qingqing Liang, Huicai Zhong
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Abstract
Semiconductor devices and methods for manufacturing the same are provided. In one embodiment, the method may include: forming a first shielding layer on a substrate, and forming one of source and drain regions with the first shielding layer as a mask; forming a second shielding layer on the substrate, and forming the other of the source and drain regions with the second shielding layer as a mask; removing a portion of the second shielding layer which is next to the other of the source and drain regions; forming a gate dielectric layer, and forming a gate conductor as a spacer on a sidewall of a remaining portion of the second shielding layer; and forming a stressed interlayer dielectric layer on the substrate.
Claims6
A semiconductor device, comprising:
- a substrate;
- and
- source and drain regions and a gate stack formed on the substrate,
- wherein the gate stack comprises:
- a gate dielectric layer;
- and
- a gate conductor, which is formed as a spacer on a sidewall of a dielectric layer or on a sidewall of a gate spacer on one side of the gate stack, wherein the gate dielectric layer is in an L-shape and extends on a sidewall of the gate conductor on said one side and also on a bottom surface of the gate conductor, and
- a stressed interlayer dielectric layer formed on the substrate,
- wherein an extent from a sidewall of the gate dielectric layer facing away from the gate conductor to a sidewall of the gate conductor on a further side opposite to said one side is greater than or equal to a distance between the source region and the drain region.
Dependencies are inferred from the claim text.