Semiconductor devices and methods for fabricating the same

A method for fabricating a semiconductor device, the method comprising:

• forming active patterns on a substrate, the active patterns protruding from the substrate;
• forming an interlayer dielectric layer on the active patterns, the interlayer dielectric layer including a plurality of grooves that expose the active patterns, the plurality of grooves including a first groove having a first width and a second groove having a second width that is greater than the first width;
• forming a first conductive layer on inner surfaces of the first and second grooves;
• forming a first sacrificial layer filling the first and second grooves;
• performing a first etching process to remove the first sacrificial layer and expose a portion of the first conductive layer;
• and
• removing the exposed portion of the first conductive layer to form first conductive patterns on top surfaces and sidewalls of the active patterns in the first and second grooves,
• wherein the plurality of grooves further comprise a third groove having a third width that is substantially equal to the first width of the first groove, wherein the first conductive patterns are formed in the first, second and third grooves, and
• wherein the method further comprises removing at least one of the first conductive patterns in the first, second and third grooves.