Semiconductor devices and methods of fabricating the same

A semiconductor device, comprising:

• a pair of gate electrodes on a substrate, the pair of gate electrodes spaced apart from each other in a first direction parallel to a top surface of the substrate;
• and
• a gate capping pattern covering top surfaces of the pair of gate electrodes, the gate capping pattern extending in a direction perpendicular to the top surface of the substrate to fill a space between the pair of gate electrodes, wherein each
• of the pair of gate electrodes has a line shape having a first width in the first direction and a second width in a second direction, wherein the second direction is parallel to the top surface of the substrate and is perpendicular to the first direction, and wherein the first width is greater than the second width.

A semiconductor device, comprising:

• an active pattern on a substrate;
• a gate electrode on the active pattern;
• a gate capping pattern on a first sidewall of the gate electrode;
• and
• a gate spacer on a second sidewall of the gate electrode opposing the first sidewall and on at least one of a third sidewall or a fourth sidewall of the gate electrode.