Manufacturing method of semiconductor device and semiconductor device
AssigneeRenesas Electronics Corporation
InventorHideki Makiyama
Life of this patent
Estimating the term…
Abstract
The thickness of an insulating film, which will serve as an offset spacer film and is formed in an offset monitor region, is managed as the thickness of an offset spacer film formed over the side wall surface of a gate electrode of an SOTB transistor STR, etc. When the measured thickness is within the tolerance of a standard thickness, standard implantation energy and a standard dose amount are set. When the measured thickness is smaller than the standard thickness, implantation energy and a dose amount, which are respectively lower than the standard values thereof, are set. When the measured thickness is larger than the standard thickness, implantation energy and a dose amount, which are respectively higher than the standard values thereof, are set.
Claims8
A manufacturing method of a semiconductor device, comprising the steps of:
- providing a semiconductor substrate, over the surface of which a semiconductor layer is formed by interposing a buried insulating film;
- defining a plurality of regions including a first element formation region and a first monitor region in the substrate;
- forming a plurality of gate electrodes, including the step of forming a first gate electrode in the semiconductor layer located in the first element formation region;
- forming a laminated insulating film including a first insulating film that covers each of the surface of the semiconductor layer and the side wall surface of the first gate electrode in the first element formation region and covers the substrate in the first monitor region;
- forming a first mask member that exposes the laminated insulating film located in the first element formation region and covers the laminated insulating film located in the first monitor region;
- performing a first process on the laminated insulating film, including a step in which, by performing an etching process on the laminated insulating film with the use of the first mask member as an etching mask, a first sidewall insulating film including an offset spacer film including the first insulating film is formed to cover the side wall surface of the first gate electrode and the semiconductor layer in the first element formation region and the laminated insulating film is left in the first monitor region;
- after the first mask member is removed, forming an elevated epitaxial layer over the surface of the exposed semiconductor layer located in the first element formation region by an epitaxial growth process;
- performing a second process on the laminated insulating film, including a step in which a film other than the offset spacer film of the first sidewall insulating film is removed in the first element formation region and a film other than the first insulating film of the laminated insulating film is removed in the first monitor region;
- measuring a thickness of the first insulating film located in the first monitor region;
- setting implantation conditions for forming an extension region based on the thickness;
- and
- forming the extension region in the semiconductor layer located in the first element formation region by implanting impurities based on the set implantation conditions.
Dependencies are inferred from the claim text.