Controlled synthesis and transfer of large area heterostructures made of bilayer and multilayer transition metal dichalocogenides
AssigneeThe Penn State Research Foundation
InventorsHumberto Terrones, Mauricio Terrones, Ana Laura Elias, Nestor Perea-Lopez
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Abstract
Embodiments are presented herein that provide a TMD system wherein the first layered material is made of heterobilayers or multilayers with semiconducting direct band gaps. The first layered material may be made of multiple layers of different TMD with different stackings, exhibiting smaller direct and indirect band gaps smaller than monolayer systems of TMD.
Claims8
A layered semiconducting material comprising heterobilayers, said heterobilayers including semiconducting direct band gaps comprising transition metal dichalcogenides (TMD), wherein a heterobilayer comprises a first monolayer including a first TMD and a second monolayer including a second TMD, wherein the first TMD has a different transition metal or a different chalcogenide than the second TMD, wherein at least one of said heterobilayers is a hybrid semiconducting transition metal dichalcogenide (STMD) selected from the group consisting of WS2—MoS2, WSe2—WS2, WSe2—MoS2, MoSe2—WS2, MoSe2—MoS2, and WSe2—MoSe2.
A TMD system comprising at least two layers selected from the group consisting of
- MX2, where M is selected from the group consisting of Mo, W, and Nb, and where X is selected from the group consisting of S, Se, and Te, and wherein a pair of the at least two layers of the TMD system form a heterobilayer, wherein a first layer of the heterobilayer has a different M or a different X than a second layer of the heterobilayer wherein at least one layer of said at least two layers is NbS2.
Dependencies are inferred from the claim text.