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US 9,806,162 B2Granted
Semiconductor device having a plurality of transistors connected in parallel
AssigneeRenesas Electronics Corporation
InventorsKinya Ohtani, Kenji Okada, Yasuhiro Nishimura, Noriaki Mukaide
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Abstract
A semiconductor device SD includes a substrate SUB, a plurality of gate electrodes GE, a gate pad GEP, and gate interconnects GINC. The plurality of gate electrodes GE are formed in the substrate SUB, and extend electrically in parallel to each other. The gate pad GEP is formed in a region different from that in which the plurality of gate electrodes GE are formed in the substrate SUB. Each of a plurality of gate interconnects GINC connects the plurality of gate electrodes GE to the gate pad GEP.
Claims4
A semiconductor device comprising:
- a substrate;
- a plurality of gate electrodes, formed in the substrate, which extend in parallel to each other;
- a first gate interconnect comprising a plurality of connecting portions connected to each of the plurality of gate electrodes;
- a gate terminal which is formed in a place different from that in which the plurality of gate electrodes and the first gate interconnect are formed in the substrate;
- and
- a second gate interconnect that connects the gate terminal and the first gate interconnect to each other,
- wherein a resistance value of the first gate interconnect per unit length is larger than a resistance value of the second gate interconnect per unit length,
- wherein the first gate interconnect and the second gate interconnect have a configuration in which a first layer and a second layer are laminated, and
- wherein a width of the second layer in the first gate interconnect is smaller than a width of the second layer in the second gate interconnect.
6 more elements
Dependencies are inferred from the claim text.