Power integrated devices, electronic devices including the same, and electronic systems including the same

An integrated device comprising:

• a semiconductor layer having a first conductivity type;
• a source region having a second conductivity type;
• a drift region having the second conductivity type, disposed in the semiconductor layer, and spaced apart from the source region by a channel region;
• a drain region having the second conductivity type and disposed in an upper portion of the drift region;
• a gate insulation layer disposed over the channel region and extending over the drift region;
• a first field insulation plate disposed over the drift region, contacting a sidewall of the gate insulation layer, and having a planar structure;
• a second field insulation plate extending from under the first field insulation plate into the drift region and having a trench structure;
• and
• a gate conductive pattern disposed over the gate insulation layer,
• wherein the gate conductive pattern extends over the first field insulation plate,
• wherein the drift region includes a first drift region disposed in the semiconductor layer and covering a bottom surface of the drain region, and a second drift region disposed in the semiconductor layer between the channel region and the first drift region, and
• wherein a junction depth of the first drift region is greater than a junction depth of the second drift region.