FinFET structure and method for manufacturing thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun Hsiung Tsai, Lai-Wan Chong, Chien-Wei Lee, Kei-Wei Chen
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Abstract
Present disclosure provides a FinFET structure, including a fin and a gate surrounding a first portion of the fin. A dopant concentration in the first portion of the fin is lower than about 1E17/cm3. The FinFET structure further includes an insulating layer surrounding a second portion of the fin. The dopant concentration of the second portion of the fin is greater than about 8E15/cm3. The insulating layer includes a lower layer and an upper layer, and the lower layer is disposed over a substrate connecting to the fin and has a dopant concentration greater than about 1E19/cm3.
Claims20
A FinFET structure, comprising:
- a substrate;
- a fin protruding from the substrate;
- a gate surrounding a first portion of the fin;
- and
- an insulating layer surrounding a second portion of the fin, the first portion overlying the second portion;
- wherein a dopant concentration in a lower portion of the insulating layer is greater than a dopant concentration in an upper portion of the insulating layer, the lower portion is in direct contact with the substrate.
A MOS structure, comprising:
- a substrate;
- a fin protruding from the substrate;
- and
- an insulating layer surrounding a well portion of the fin, a channel portion of the fin extruding from the insulating layer,
- wherein a dopant concentration in an upper portion of the insulating layer is lower than a dopant concentration in a lower portion of the insulating layer, and
- wherein the lower portion of the insulating layer is in direct contact with the substrate.
A semiconductor structure, comprising:
- a substrate;
- a fin on the substrate;
- and
- an insulating layer surrounding a well portion of the fin, a channel portion of the fin extruding from the insulating layer;
- wherein a dopant concentration in a lower layer of the insulating layer is greater than a dopant concentration in an upper layer of the insulating layer, the lower layer is in direct contact with the substrate.
Dependencies are inferred from the claim text.