Semiconductor device
AssigneeMediatek Inc.
InventorsBo-Shih Huang, Chien-Hui Chuang, Cheng-Chou Hung
Life of this patent
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Abstract
A semiconductor device comprising a substrate is disclosed. The substrate comprises: a well of type one; a first doped region of type two, provided in the well of type one; a well of type two, adjacent to the well of type one; a first doped region of type one, doped in the well of type two; and a second doped region of type two, provided in the well of type one and the well of type two, not touching the first doped region of type two. The substrate comprises no isolating material provided in a current path formed by the first doped region of type two, the well of type one, the well of type two and the first doped region of type one.
Claims20
A semiconductor device, comprising:
- a substrate, comprising:
- a well of type one;
- a first doped region of type two, provided in the well of type one;
- a well of type two, adjacent to the well of type one;
- a first doped region of type one, doped in the well of type two;
- a second doped region of type two, provided in the well of type one and the well of type two, not touching the first doped region of type two;
- a third doped region of type one, provided in the well of type one;
- and
- a protecting material, provided on the well of type one, wherein the protecting material covers part of the third doped region of type one, part of the first doped region of type two and a region of the well of type one between the third doped region of type one and the first doped region of type two,
- wherein the substrate comprises no isolating material provided in a current path formed by the first doped region of type two, the well of type one, the well of type two and the first doped region of type one.
A semiconductor device, comprising:
- a substrate, comprising:
- a well of type one;
- a first doped region of type two, provided in the well of type one;
- a well of type two, adjacent to the well of type one;
- a first doped region of type one, doped in the well of type two;
- a third doped region of type one, provided in the well of type one;
- and
- a protecting material, provided on the well of type one, wherein the protecting material covers part of the third doped region of type one, part of the first doped region of type two and a region of the well of type one between the third doped region of type one and the first doped region of type two,
- wherein no silicide is provided on at least part of the well of type one adjacent to the first doped region of type two, and at least part of the first doped region of type two adjacent to the well of type one;
- wherein the substrate comprises no isolating material provided in a current path formed by the first doped region of type two, the well of type one, the well of type two and the first doped region of type one.
Dependencies are inferred from the claim text.