Image sensor and manufacturing method thereof

An image sensor comprising:

• a substrate;
• photoelectric transducers on the substrate, each of the photoelectric transducers including a hydrogenated amorphous silicon layer;
• and
• switching elements above the photoelectric transducers, each of the switching elements including an amorphous oxide semiconductor layer,
• wherein each of the photoelectric transducers is configured to convert light entering from a side of the switching element to an electric charge, and includes a hydrogenated amorphous silicon carbide layer laminated on a top of the hydrogenated amorphous silicon layer of the photoelectric transducer, the hydrogenated amorphous silicon carbide layer having a function to suppress penetration of hydrogen separated from the hydrogenated amorphous silicon layer into the switching element.